Bonding Routes: Single-crystal SiC bonded to polycrystalline SiC, semiconductor-grade single-crystal Si bonded to diamond, single-crystal SiC bonded to diamond, GaN bonded to diamond, Si₃N₄ bonded to diamond.

Deposition Routes: Semiconductor-grade single-crystal Si with diamond deposition, single-crystal SiC with diamond deposition, GaN with diamond deposition, Si₃N₄ with diamond deposition, polycrystalline SiC with diamond deposition.

Application Scenarios:

Bonding: Backside heat spreaders, high-power, high-flux, high-end RF / automotive-grade power devices.

Deposition: Frontside thin films, integrated coatings, medium-to-low power, specialty sensors / small packages.

Advantages

Bonding — Common Strengths

Low process temperature, no damage to semiconductor epitaxial films

High-thermal-conductivity single/polycrystalline diamond substrates enable higher cooling ceilings

Controllable interface with optimized low interfacial thermal resistance

Independent processing of both substrates with pre-screening of defects, improving final yield

Deposition — Common Strengths

Monolithic growth — no bonding voids or delamination risks

Ideal for front-side diamond thin-film fabrication on devices

Suited for large-scale continuous coating, with cost potential for mid/low-power applications